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STD25NF10

Features: ` TYPICAL RDS(on) = 0.033` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATIONApplication· HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Collector-Source Voltage (VGS = 0 V) ...

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SeekIC No. : 004507431 Detail

STD25NF10: Features: ` TYPICAL RDS(on) = 0.033` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATION ORIENTED CHARACTERIZATIONApplication· HIGH-EFFICIENCY DC-DC CONVERTERS· UPS AND MOTOR CONTROLSpe...

STD25NF10 Data Sheet

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Part Number:
STD25NF10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.033 
 ` EXCEPTIONAL dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` APPLICATION ORIENTED CHARACTERIZATION


Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
100
V
VDGR Drain-gate Voltage (RGS = 20 k)

100
V
VGS Gate-Source Voltage
±20
V
ID(*) Drain Current (continuous) at TC = 25
25
A
ID Drain Current (continuous) at TC = 100
21
A
IDM(`) Drain Current (pulsed)
100
A
PTOT Total Dissipation at TC = 25
00
W
Derating Factor
0.67
W/
dv/dt(1) Peak Diode Recovery voltage slope
13
V/ns
EAS(2) Single Pulse Avalanche Energy
480
mJ
Tstg Storage Temperature
-55 to 175
Tj Max. Operating Junction Temperature

(`) Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) ISD 35A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID =12.5 A, VDD = 50V




Description

This STD25NF10 Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




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