STD25NF10L

(`) Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) I_SD 25A, di/dt 300A/s, V_DD V_(BR)DSS, T_j T_JMAX
(2) Starting T_j = 25 , I_D =12.5 A, V_DD = 50V

The STD25NF10L is one member of the low gate charge STripFET II power MOSFET series. This series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. And it can be used in (1)high-efficiency dc-dc converters; (2)ups and motor control and intended for any applications with low gate drive requirements.

Features of the STD25NF10L are:(1)typical rds(on)=0.030 w;(2)exceptional dv/dt capability;(3)100% avalanche tested;(4)low threshold device;(5)logic level device;(6)surface-mounting dpak (to-252) power package in tape & reel (SUFFIX "T4").

The absolute maximum ratings of the STD25NF10L can be summarized as:(1)drain-source voltage (VGS=0):100 V;(2)drain-gate voltage (RGS=20 kW):100 V;(3)gate-source voltage:±16 V;(4)drain current (continuous) at Tc=25°C:25 A;(5)drain current (continuous) at Tc=100°C:25 A;(6)drain current (pulsed):100 A;(7)total dissipation at TC=25°C:100 W;(8)derating factor:0.67 W/°C;(9)peak diode recovery voltage slope:20 V/ns;(10)single pulse avalanche energy:450 mJ;(11)storage temperature:-55 to 175 °C;(12)max. operating junction temperature:-55 to 175 °C.If you want to know more information such as the electrical characteristics about the STD25NF10L, please download the datasheet in www.seekic.com or www.chinaicmart.com .