STD2NB40

Features: TYPICAL RDS(on) = 3.5 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationSWITCH MODE POWER SUPPLIES (SMPS)DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPP...

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SeekIC No. : 004507439 Detail

STD2NB40: Features: TYPICAL RDS(on) = 3.5 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationSWI...

floor Price/Ceiling Price

Part Number:
STD2NB40
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 TYPICAL RDS(on) = 3.5 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED
 ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL



Application

 SWITCH MODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
400
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

400

V

VGE
Gate-Emitter Voltage
± 30
V

ID

Drain Current (continuous) at TC = 25°C

2

A

ID
Drain Current (continuous) at TC = 100°C
1.26

A
IDM ()
Drain Current (pulsed)
8
A
PTOT
Total Dissipation at TC = 25°C
40
W
Derating Factor
0.32
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
3.5
V/ns

Tstg

Storage Temperature

- 65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C




Description

Using the latest high voltage MESH OVERLAYÔ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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