STD2NB60-1

Features: ` TYPICAL RDS(on) = 3.3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVESpecifications ...

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SeekIC No. : 004507443 Detail

STD2NB60-1: Features: ` TYPICAL RDS(on) = 3.3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· SWITCH MODE POWER SUPPLIES (SMPS)· DC-A...

floor Price/Ceiling Price

Part Number:
STD2NB60-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 ` TYPICAL RDS(on) = 3.3
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` VERY LOW INTRINSIC CAPACITANCES
 ` GATE CHARGE MINIMIZED



Application

 · SWITCH MODE POWER SUPPLIES (SMPS)
 · DC-AC CONVERTERS FOR WELDING
     EQUIPMENT AND UNINTERRUPTIBLE
     POWER SUPPLIES AND MOTOR DRIVE



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600

V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
2.6
A
ID Drain Current (continuous) at TC = 100
1.6
A
IDM(1) Drain Current (pulsed)
10.4
A
Ptot Total Dissipation at TC = 25
50
W
  Derating Factor
0.4
W/
dv/dt(2) Peak Diode Recovery voltage slope
4.5
V/ns
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150

(•) Pulse width limited by safe operating area.
(1) ISD 2.6A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAY™ process, STD2NB60-1STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics. 




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