Position: Home  > All Categories> Integrated Circuits (ICs) > STD2NB60

STD2NB60

Features: ` TYPICAL RDS(on) = 3.3` EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVESpecifications ...

product image

STD2NB60 Picture
See larger image
SeekIC No. : 004507442 Detail

STD2NB60: Features: ` TYPICAL RDS(on) = 3.3` EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZEDApplication· SWITCH MODE POWER SUPPLIES (SMPS)· DC-AC ...

STD2NB60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STD2NB60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 `  TYPICAL RDS(on) = 3.3 
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  VERY LOW INTRINSIC CAPACITANCES
 `  GATE CHARGE MINIMIZED


Application

 ·  SWITCH MODE POWER SUPPLIES (SMPS)
 ·  DC-AC CONVERTERS FOR WELDING
      EQUIPMENT AND UNINTERRUPTIBLE
      POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
2.6
A
ID Drain Current (continuous) at TC = 100
1.6
A
IDM(`) Drain Current (pulsed)
10.4
A
PTOT Total Dissipation at TC = 25
50
W
  Derating Factor
0.4
W/
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area.
(1) ISD 2.6A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX


Description

Using the latest high voltage MESH OVERLAY™ process, STD2NB60 SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Switches
US32DMRJ
HBGQ22P-11ET
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
RF and RFID
X3C26P1-30S
1P620S
Optoelectronics
SFH7770
TLP423J
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
View more