STD2NB80

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 6.5 Ohms
Continuous Drain Current : 1.9 A


Features:

 TYPICAL R_DS(on) = 4.6 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED
 ADD SUFFIX "T4" FORORDERING IN TAPE & REEL (2500 UNITS)


Application

 SWITCH MODE POWER SUPPLIES(SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENTAND
   UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	800	V
VDGR	Drain- gate Voltage (RGS = 20 kW)	800	V
VGE	Gate-Emitter Voltage	± 30	V
ID	Drain Current (continuous) at TC = 25°C	1.9	A
ID	Drain Current (continuous) at TC = 100°C	1.2	A
IDM ()	Drain Current (pulsed)	7.6	A
PTOT	Total Dissipation at TC = 25°C	55	W
	Derating Factor	0.44	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	V/ns
Tstg	Storage Temperature	- 65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

Description

Using the latest high voltage MESH OVERLAY] process, STD2NB80 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.