STD2NK70Z-1

MOSFET N-Ch, 700V-6ohms Zener SuperMESH 1.6A

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SeekIC No. : 00157223 Detail

STD2NK70Z-1: MOSFET N-Ch, 700V-6ohms Zener SuperMESH 1.6A

floor Price/Ceiling Price

US $ .32~.35 / Piece | Get Latest Price
Part Number:
STD2NK70Z-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~2180
  • 2180~5000
  • 5000~10000
  • Unit Price
  • $.35
  • $.33
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.6 A
Resistance Drain-Source RDS (on) : 7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 1.6 A
Resistance Drain-Source RDS (on) : 7 Ohms


Features:

 `  TYPICAL RDS(on) = 6
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  ESD IMPROVED CAPABILITY
 `  100% AVALANCHE TESTED
 `  NEW HIGH VOLTAGE BENCHMARK
 `  GATE CHARGE MINIMIZED



Application

 ·  SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
 ·  WELDING EQUIPMENT
 · FLYBACK CONFIGURATION FOR BATTERY CHARGER



Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
700
V
VDGR Drain-gate Voltage (RGS = 20 k)

700

V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
1.6
A
ID Drain Current (continuous) at TC = 100
1
A
IDM(*) Drain Current (pulsed)
6.4
A
PTOT Total Dissipation at TC = 25
45
W
  Derating Factor
0.36
W/
VESD(G-S) Gate-source ESD(HBM-C=100pF, R=1.5k)
2000
kV
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tstg Storage Temperature
-55 to 150
Tj Operating Junction Temperature
(*) Pulse width limited by safe operating area
(1) ISD 1.6 A, di/dt 200 A/s, VDD V(BR)DSS



Description

The STD2NK70Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTD2NK70Z-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs7 Ohm @ 800mA, 10V
Input Capacitance (Ciss) @ Vds 280pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs11.4nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD2NK70Z 1
STD2NK70Z1



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