Position: Home  > All Categories> Integrated Circuits (ICs) > STD2NK70Z

STD2NK70Z

Features: ` TYPICAL RDS(on) = 6 ` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION· WELDING EQUIPMENT· FLYBACK CONFIGURATION FOR BATTERY ...

product image

STD2NK70Z Picture
See larger image
SeekIC No. : 004507450 Detail

STD2NK70Z: Features: ` TYPICAL RDS(on) = 6 ` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY` 100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· SINGLE-ENDED SMPS IN ...

STD2NK70Z Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STD2NK70Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

 `  TYPICAL RDS(on) = 6
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  ESD IMPROVED CAPABILITY
 `  100% AVALANCHE TESTED
 `  NEW HIGH VOLTAGE BENCHMARK
 `  GATE CHARGE MINIMIZED


Application

 ·  SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
 ·  WELDING EQUIPMENT
 · FLYBACK CONFIGURATION FOR BATTERY CHARGER


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
700
V
VDGR Drain-gate Voltage (RGS = 20 k)

700
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
1.6
A
ID Drain Current (continuous) at TC = 100
1
A
IDM(*) Drain Current (pulsed)
6.4
A
PTOT Total Dissipation at TC = 25
45
W
  Derating Factor
0.36
W/
VESD(G-S) Gate-source ESD(HBM-C=100pF, R=1.5k)
2000
kV
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tstg Storage Temperature
-55 to 150
Tj Operating Junction Temperature
(*) Pulse width limited by safe operating area
(1) ISD 1.6 A, di/dt 200 A/s, VDD V(BR)DSS


Description

The STD2NK70Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high vltage MOSFETs including revolutionary MDmesh™ products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
LED Products
LM24P20
KCG057QV1DB-G770
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Memory Cards, Modules
WT32
VTL5C7
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
View more