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STD2NK90Z

Features: ` TYPICAL RDS(on) = 5 ` EXTREMELY HIGH dv/dt CAPABILITY` IMPROVED ESD CAPABILITY` 100% AVALANCHE RATED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR...

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SeekIC No. : 004507451 Detail

STD2NK90Z: Features: ` TYPICAL RDS(on) = 5 ` EXTREMELY HIGH dv/dt CAPABILITY` IMPROVED ESD CAPABILITY` 100% AVALANCHE RATED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPE...

STD2NK90Z Data Sheet

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Part Number:
STD2NK90Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

 ` TYPICAL RDS(on) = 5
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` IMPROVED ESD CAPABILITY
 ` 100% AVALANCHE RATED
 ` GATE CHARGE MINIMIZED
 ` VERY LOW INTRINSIC CAPACITANCES
 ` VERY GOOD MANUFACTURING REPEATIBILITY


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC


Specifications

Symbol Parameter
Value
Unit
STP2NK90Z
STD2NK90Z
STD2NK90Z-1
VDS Collector-Source Voltage (VGS = 0 V)
900
V
VDGR Drain-gate Voltage (RGS = 20 k)
900
V
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
2.1
A
ID Drain Current (continuous) at TC = 100
1.3
A
IDM(`) Drain Current (pulsed)
8.4
A
PTOT Total Dissipation at TC = 25
70
W
  Derating Factor
0.56
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2000
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150

(`) Pulse width limited by safe operating area
(1) ISD 2.1A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

The STD2NK90Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

 




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