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STD40NF06LZ

Features: ` TYPICAL RDS(on) = 0.020` 100% AVALANCHE TESTED` LOW GATE CHARGE` LOGIC LEVEL GATE DRIVE` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )` BUILT-IN ZENER DIODES TO IMPROVE ESD PROTECTION UP TO 2kVApplication· SINGLE-ENDED SMPS IN MONITOTS, COMPUTER AND IND...

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SeekIC No. : 004507487 Detail

STD40NF06LZ: Features: ` TYPICAL RDS(on) = 0.020` 100% AVALANCHE TESTED` LOW GATE CHARGE` LOGIC LEVEL GATE DRIVE` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )` BUILT-IN ZENER DI...

STD40NF06LZ Data Sheet

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Part Number:
STD40NF06LZ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.020
`  100% AVALANCHE TESTED
`  LOW GATE CHARGE
`  LOGIC LEVEL GATE DRIVE
`  SURFACE-MOUNTING DPAK (TO-252)
     POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
`  BUILT-IN ZENER DIODES TO IMPROVE ESD PROTECTION UP TO 2kV




Application

· SINGLE-ENDED SMPS IN MONITOTS, COMPUTER AND INDUSTRIAL APPLICATION
· WELDING EQUIPMENT
· AUTOMOTIVE


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±16
V
ID Drain Current (continuous) at TC = 25
40
A
ID Drain Current (continuous) at TC = 100
28
A
IDM(`) Drain Current (pulsed)
160
A
Ptot Total Dissipation at TC = 25
100
W
  Derating Factor
0.67
W/
VESD(G-S) Gate-source ESD(HBM-C=100pF, R=15k)
±2.5
kV
dv/dt(1) Peak Diode Recovery voltage slope
9
V/ns
EAS(2) Single Pulse Avalanche Energy
450
mJ
Tstg Storage Temperature
-55 to 175
Tj Operating Junction Temperature
(`) Pulse width limited by safe operating area.
(1)ISD 40A, di/dt100A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25   ID = 20A VDD = 45V


Description

This STD40NF06LZ Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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