Features: Surface Mount P ackage.Super high dense cell design for low R DS (ON).Rugged and reliable.ESDP rotected.Specifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous @TC=25 C a ...
STD410S: Features: Surface Mount P ackage.Super high dense cell design for low R DS (ON).Rugged and reliable.ESDP rotected.Specifications Parameter Symbol Limit Unit Drain-Source Voltage ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Parameter |
Symbol |
Limit |
Unit |
| Drain-Source Voltage |
VDS |
40 |
V |
| Gate-S ource Voltage |
VGS |
±20 |
V |
| Drain Current-Continuous @TC=25 C a |
ID |
30 |
A |
| -Pulsed b |
IDM |
100 |
A |
| Drain-Source Diode Forward Current |
IS |
8 |
A |
| Maximum Power DissipationTa = 25 |
PD |
50 |
W |
| Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |
|
| THERMAL CHARACTER IS TICS | |||
| Thermal Resistance, Junction-to-Case |
RJC |
3 |
/W |
| Thermal Resistance, Junction-to-Ambient |
RJA |
50 |
/W |