Features: TO-252 and TO-251 Package.Super high dense cell design for low RDS(ON).Rugged and reliable.ESD Protected.Specifications Symbol Parameter Limit Unit VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous a TA=2...
STD412S: Features: TO-252 and TO-251 Package.Super high dense cell design for low RDS(ON).Rugged and reliable.ESD Protected.Specifications Symbol Parameter Limit Unit VDS Drain-Source V...
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|
Symbol |
Parameter |
Limit |
Unit |
|
VDS |
Drain-Source Voltage |
40 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID |
Drain Current-Continuous a TA=25 TA=70 |
22 17.5 |
A A |
|
IDM |
-Pulsed b |
80 |
A |
|
EAS |
Avalanche Energy c |
10 |
mJ |
|
PD |
Maximum Power Dissipation a TA=25 TA=70 |
25 16 |
W W |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
-55~150 |