STD421S

Features: TO-252 and TO-251 P ackage.S uper high dense cell design for low R DS (ON).R ugged and reliable.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Voltage VDSVGS -40±20 VV Continuous Drain Current a (TA=25 ) (Tc=70 )-Pulsed bDrain-Source Diode Fo...

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STD421S Picture
SeekIC No. : 004507492 Detail

STD421S: Features: TO-252 and TO-251 P ackage.S uper high dense cell design for low R DS (ON).R ugged and reliable.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Volta...

floor Price/Ceiling Price

Part Number:
STD421S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

TO-252 and TO-251 P ackage.
S uper high dense cell design for low R DS (ON).
R ugged and reliable.



Specifications

Parameter Symbol Limit Units
Drain-Source Voltage

Gate-Source Voltage
VDS

VGS
-40

±20
V

V
Continuous Drain Current a (TA=25 )
(Tc=70 )

-Pulsed b

Drain-Source Diode Forward Current


Maximum Power Dissipation (TA=25 )
(Tc=70 )
ID

IDM

IS


PD
-10
-8.3

-50

2.5

50
35
A


A

A


W
Single Avalanche Current IS -10
A

Operating Junction and Storage
Temperature Range
TJ,Tstg
-55 ~ 175




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