Features: TO-252 and TO-251 P ackage.S uper high dense cell design for low R DS (ON).R ugged and reliable.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Voltage VDSVGS -40±20 VV Continuous Drain Current a (TA=25 ) (Tc=70 )-Pulsed bDrain-Source Diode Fo...
STD421S: Features: TO-252 and TO-251 P ackage.S uper high dense cell design for low R DS (ON).R ugged and reliable.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Volta...
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| Parameter | Symbol | Limit | Units |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
-40 ±20 |
V V |
| Continuous Drain Current a (TA=25 ) (Tc=70 ) -Pulsed b Drain-Source Diode Forward Current Maximum Power Dissipation (TA=25 ) (Tc=70 ) |
ID IDM IS PD |
-10 -8.3 -50 2.5 50 35 |
A A A W |
| Single Avalanche Current | IS | -10 |
A |
Operating Junction and Storage Temperature Range |
TJ,Tstg | -55 ~ 175 |