Features: ·Super high dense cell design for low RDS (ON).·R ugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 40 V Gate-S ource Voltage VGS 20 V Drain Current-Continuous @Ta=25 ID ...
STD426S: Features: ·Super high dense cell design for low RDS (ON).·R ugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VD...
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|
Parameter |
Symbol |
Limit |
Unit |
| Drain-S ource Voltage |
VDS |
40 |
V |
| Gate-S ource Voltage |
VGS |
20 |
V |
| Drain Current-Continuous @Ta=25 |
ID |
53 |
A |
| -Pulsed |
IDM |
100 |
A |
| Drain-S ource Diode Forward Current |
IS |
20 |
A |
| Avalanche Current |
IAS |
20 |
A |
| Avalanche Energy |
EAS |
100 |
mJ |
| Maximum Power Dissipation @Ta=25 |
PD |
50 |
W |
| Operating Junction and S torage Temperature R ange |
TJ, TSTG |
-55 to 175 |