Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Voltage VDSVGS 40±20 VV Drain Current-Continuous a TC = 25TC = 70 ID 5040 A -Pulsed b IDM ...
STD434S: Features: ·Super high dense cell design for low RDS(ON).·Rugged and reliable.·TO-252 and TO-251 Package.Specifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Voltage...
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| Parameter | Symbol | Limit | Units | |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
40 ±20 |
V V | |
| Drain Current-Continuous a | TC = 25 TC = 70 |
ID |
50 40 |
A |
| -Pulsed b | IDM | 147 | ||
| Single Pulse Avalanche Energy d | EAS | 91 | mJ | |
| Maximum Power Dissipation a | TC = 25 TC = 70 |
PD | 42 27 |
W |
| Operating Junction and Storage Temperature Range |
TJ,Tstg | 55 to 150 | ||