Features: TYPICAL RDS(on) = 0.011 WLOW THRESHOLD DRIVEADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VCES Drain-source Voltage (VG...
STD45NF03L: Features: TYPICAL RDS(on) = 0.011 WLOW THRESHOLD DRIVEADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONV...
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|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
30 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
45 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
31.5 |
A |
|
IDM (*) |
Drain Current (pulsed) |
180 |
A |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
55 |
W |
|
|
Derating Factor |
0.37 |
W/°C |
|
EAS(1) |
Single Pulse Avalanche Energy |
200 |
mJ |
|
Tstg |
Storage Temperature |
- 65 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This STD45NF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.