STD4NB25

Features: TYPICAL RDS(on) = 0.95 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDFOR TROUGH-HOLE VERSION CONTACT SALES OFFICEApplicationSWITCH MODE POWER SUPPLIES (SMPS)DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLI...

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SeekIC No. : 004507501 Detail

STD4NB25: Features: TYPICAL RDS(on) = 0.95 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDFOR TROUGH-HOLE VERSION CONTACT SALES OFFICEApplicationSWITC...

floor Price/Ceiling Price

Part Number:
STD4NB25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/12/24

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.95 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED
 FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE



Application

 SWITCH MODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
250
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

250

V

VGE
Gate-Emitter Voltage
± 30
V

ID

Drain Current (continuous) at TC = 25°C

4

A

ID
Drain Current (continuous) at TC = 100°C
2.5

A
IDM ()
Drain Current (pulsed)
16
A
PTOT
Total Dissipation at TC = 25°C
40
W
Derating Factor
0.32
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
5.5
V/ns

Tstg

Storage Temperature

- 65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C




Description

Using the latest high voltage MESH OVERLAYÔ process, STD4NB25 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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