Features: TYPICAL RDS(on) = 0.95 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDFOR TROUGH-HOLE VERSION CONTACT SALES OFFICEApplicationSWITCH MODE POWER SUPPLIES (SMPS)DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLI...
STD4NB25: Features: TYPICAL RDS(on) = 0.95 WEXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTEDVERY LOW INTRINSIC CAPACITANCESGATE CHARGE MINIMIZEDFOR TROUGH-HOLE VERSION CONTACT SALES OFFICEApplicationSWITC...
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|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
250 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
250 |
V |
|
VGE |
Gate-Emitter Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C |
4 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
2.5 |
A |
|
IDM () |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
40 |
W |
|
|
Derating Factor |
0.32 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
5.5 |
V/ns |
|
Tstg |
Storage Temperature |
- 65 to 150 |
°C |
|
Tj |
Max. Operating Junction Temperature |
150 |
°C |
Using the latest high voltage MESH OVERLAYÔ process, STD4NB25 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.