STD4NK50Z-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 2.7 Ohms


Features:

`TYPICALRDS (on)=2.3
`EXTREMELYHIGHdv/dtCAPABILITY
`100%AVALANCHETESTED
`GATECHARGEMINIMIZED
`VERYLOWINTRINSICCAPACITANCES
`VERYGOODMANUFACTURING
`REPEATIBILITY


Description

The STD4NK50Z-1 SuperMESH^TM series is obtained through an extreme optimization of ST's well established strip based PowerMESH^TM layout.Inaddition topushing on-resis tancesig nificantly down,special careistak- entoen surea very gooddv/dtcapa bility forthe mostd emandingap plications. Suchserie scomple- mentsST full range ofhigh voltage MOSFETsin- cluding  revolutionary MDmesh^TM products.

Parameters:

Technical/Catalog Information	STD4NK50Z-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	2.7 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	310pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	12nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD4NK50Z 1 STD4NK50Z1