Position: Home  > All Categories> Integrated Circuits (ICs) > STD4NK80Z

STD4NK80Z

Features: ` TYPICAL RDS(on) = 3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES`VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC· LIGHTINGSpecif...

product image

STD4NK80Z Picture
See larger image
SeekIC No. : 004507507 Detail

STD4NK80Z: Features: ` TYPICAL RDS(on) = 3 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES`VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIG...

STD4NK80Z Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STD4NK80Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`  TYPICAL RDS(on) = 3
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES
`  VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol Parameter
Value
Unit
STP4NK80Z
STP4NK80ZFP
STD4NK80Z
STD4NK80Z-1
VDS Collector-Source Voltage (VGS = 0 V)
800
V
VDGR Drain-gate Voltage (RGS = 20 k)

800
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
3
3(*)
3
A
ID Drain Current (continuous) at TC = 100
1.89

1.89(*)
1.89
A
IDM(`) Drain Current (pulsed)
12
12(*)
12
A
Ptot Total Dissipation at TC = 25
80
25
80
W
  Derating Factor
0.62
0.21
0.64
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
3000
KV
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
-
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150

(`) Pulse width limited by safe operating area
(1) ISD 4A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed


Description

The STD4NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Resistors
A101G
3006P-1-205LF
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Circuit Protection
A50QS75-4Y
F-17*77
View more