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STD50N03L-1: MOSFET N-Channel 30V Pwr Mosfet

STD50N03L-1 Data Sheet

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Part Number:: STD50N03L-1
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	40 A
Resistance Drain-Source RDS (on) :	0.0105 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	IPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 40 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.0105 Ohms

Parameters:

Technical/Catalog Information	STD50N03L-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	1434pF @ 25V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD50N03L 1 STD50N03L1

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STD50N03L-1

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