STD5NB20

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

 TYPICAL R_DS(on) =0.7 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 VERY LOW INTRINSIC CAPACITANCES
 GATE CHARGE MINIMIZED
 FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE


Application

 HIGH EFFICIENCY DC-DC CONVERTERS
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	200	V
VDGR	Drain- gate Voltage (RGS = 20 kW)	200	V
VGE	Gate-Emitter Voltage	± 30	V
ID	Drain Current (continuous) at TC = 25°C	5	A
ID	Drain Current (continuous) at TC = 100°C	3	A
IDM ()	Drain Current (pulsed)	20	A
PTOT	Total Dissipation at TC = 25°C	45	W
	Derating Factor	0.36	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	5.5	V/ns
Tstg	Storage Temperature	- 65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

Description

Using the latest high voltage MESH OVERLAYÔ process, STD5NB20 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.