STD5NE10L Selling Leads, Price trend, STD5NE10L DataSheet download, circuit diagram from SeekIC.com

Features: TYPICAL RDS(on) = 0.3 W EXCEPTIONAL dv/dt CAPABILITYAVALANCHERUGGED TECHNOLOGY100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONFOR TAPE & REEL AND OTHER PACKAGINGOPTIONS CONTACT SALES OFFICESApplicationDC MOTOR CONTROL (DISK DRIVES,etc.)DC-DC & DC-AC CONVERTERSSYNCHRONOUS...

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SeekIC No. : 004507515 Detail

STD5NE10L: Features: TYPICAL RDS(on) = 0.3 W EXCEPTIONAL dv/dt CAPABILITYAVALANCHERUGGED TECHNOLOGY100% AVALANCHE TESTEDAPPLICATIONORIENTED CHARACTERIZATIONFOR TAPE & REEL AND OTHER PACKAGINGOPTIONS CONTAC...

STD5NE10L Data Sheet

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Part Number:: STD5NE10L
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/24

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Product Details

Description

Features:

TYPICAL R_DS(on) = 0.3 W
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATIONORIENTED CHARACTERIZATION
FOR TAPE & REEL AND OTHER PACKAGINGOPTIONS CONTACT SALES OFFICES

Application

DC MOTOR CONTROL (DISK DRIVES,etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION

Specifications

Symbol	Parameter	Value	Unit
V_CES	Drain-source Voltage (VGS = 0)	100	V
V_DGR	Drain- gate Voltage (RGS = 20 kW)	100	V
V_GE	Gate-Emitter Voltage	± 20	V
I_D	Drain Current (continuous) at T_C = 25°C (Steady State)	5	A
I_D	Drain Current (continuous) at T_C= 100°C	3.5	A
I_{DM ()}	Drain Current (pulsed)	20	A
P_TOT	Total Dissipation at T_C = 25°C (Steady State)	25	W
	Derating Factor	0.2	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	6	V/ns
T_stg	Storage Temperature	- 65 to 150	°C
T_j	Max. Operating Junction Temperature	150	°C

Description

This STD5NE10L Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

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STD5NE10L

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