STD5NK40Z-1

MOSFET N-Ch 400 Volt 3.0 A

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STD5NK40Z-1 Picture
SeekIC No. : 00155763 Detail

STD5NK40Z-1: MOSFET N-Ch 400 Volt 3.0 A

floor Price/Ceiling Price

US $ .29~.36 / Piece | Get Latest Price
Part Number:
STD5NK40Z-1
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 2000~5000
  • 5000~10000
  • Unit Price
  • $.36
  • $.32
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  • $.29
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 1.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 1.8 Ohms
Continuous Drain Current : 3 A
Drain-Source Breakdown Voltage : 400 V


Features:

`TYPICALRDS (on)=1.47
`EXTREMELYHIGHdv/dtCAPABILITY
`100%AVALANCHETESTED
`GATECHARGEMINIMIZED
`VERYLOWINTRINSICCAPACITANCES
`VERYGOODMANUFACTURING REPEATIBILITY



Application

·HIGHCURRENT,HIGHSPEEDSWITCHING
·IDEALFOROFF-LINEPOWERSUPPLIES, ADAPTORSANDPFC
·LIGHTING



Specifications

Symbol Parameter Value Unit

STP5NK40Z

STP5NK40ZFP
STD5NK40Z
STD5NK40Z-1
VDS Drain-source Voltage (VGS = 0)
400 V
VDGR Drain-gate Voltage (RGS = 20 )
400 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25
3 3(*) 3 A
ID Drain Current (continuous) at TC = 100 1.9 1.9(*) 1.9 A
IDM(`) Drain Current (pulsed) 12 12(*) 12 A
PTOT Total Dissipation at TC = 25
45 20 45 W
  Derating Factor 0.36 0.16 0.36 W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K) 2800 V
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150




Description

The STD5NK40Z-1 SuperMESHTMseriesisobtainedthroughan extremeoptimizationofSTMswellestablishedstrip basedPowerMESH?layout.Inadditiontopushingon resistancesignificantlydown,specialcareistak-entoensureaverygooddv/dtcapabilityforthe mostdemandingapplications.Suchseriescomple- mentsSTfullrangeofhighvoltageMOSFETsin- ludingrevolutionaryMDmeshTMproducts.




Parameters:

Technical/Catalog InformationSTD5NK40Z-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs1.8 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 305pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD5NK40Z 1
STD5NK40Z1



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