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STD5NK60Z

Features: ` TYPICAL RDS(on) = 1.2 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· HIGH CURRENT, HIGH SPEED SWITCHING· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC· LIGHTINGSpe...

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SeekIC No. : 004507518 Detail

STD5NK60Z: Features: ` TYPICAL RDS(on) = 1.2 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` GATE CHARGE MINIMIZED` VERY LOW INTRINSIC CAPACITANCES` VERY GOOD MANUFACTURING REPEATIBILITYApplication· ...

STD5NK60Z Data Sheet

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Part Number:
STD5NK60Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 `  TYPICAL RDS(on) = 1.2
 `  EXTREMELY HIGH dv/dt CAPABILITY
 `  100% AVALANCHE TESTED
 `  GATE CHARGE MINIMIZED
 `  VERY LOW INTRINSIC CAPACITANCES
 `  VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol Parameter
Value
Unit
IPAK
TO-220FP
VDS Collector-Source Voltage (VGS = 0 V)
600
V
VDGR Drain-gate Voltage (RGS = 20 k)

600
V
VGS Gate-Source Voltage
±30
V
ID Drain Current (continuous) at TC = 25
5
5
A
ID Drain Current (continuous) at TC = 100
3.16
3.16
A
IDM(`) Drain Current (pulsed)
20
20
A
PTOT Total Dissipation at TC = 25
90
25
W
Derating Factor
0.72
0.2
W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
3000
V
dv/dt(1) Peak Diode Recovery voltage slope
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
(`) Pulse width limited by safe operating area.
(1) ISD 5A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
(*) Limited only by maximum temperature allowed


Description

The STD5NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




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