STD5NM50-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.5 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.7
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` 100% AVALANCHE TESTED
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	500	V
VDGR	Drain-gate Voltage (RGS = 20 k)	500	V
VGS	Gate-Source Voltage	±30	V
ID	Drain Current (continuous) at TC = 25	7.5	A
ID	Drain Current (continuous) at TC = 100	4.7	A
IDM (`)	Drain Current (pulsed)	30	A
PTOT	Total Dissipation at TC = 25	100	W
	Derating Factor	0.8	W/
dv/dt(1)	Peak Diode Recovery voltage slope	15	V/ns
Tstg	Storage Temperature	-55 to 150
Tj	Max. Operating Junction Temperature

(`) Pulse width limited by safe operating area.
(1) I_SD 5A, di/dt  400A/s, V_DD V_(BR)DSS, T_j  T_JMAX


Description

The STD5NM50-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.