Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Gate-Source Breakdown Voltage
: +/- 30 V
Drain-Source Breakdown Voltage
: 600 V
Package / Case
: TO-252
Continuous Drain Current
: 5 A
Resistance Drain-Source RDS (on)
: 1 Ohms
DescriptionThe STD5NM60T4 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The features of STD5NM60T4: (1)typical RDS(on) = 0.9W; (2)HIGH dv/dt and avalanche capabilities; (3)100% avalanche tested; (4)low input capacitance and gate charge; (5)low gate input resistance.
The following is about the maximum ratings of STD5NM60T4: (1)Drain-source Voltage (VGS = 0): 600 V ; (2)Drain- gate Voltage (RGS = 20 k): 600 V ; (3)Gate-Source Voltage: ±30 V ; (4)Drain Current (continuous) at Tc = 25 : 5 A ; (5)Drain Current (continuous) at Tc = 100 : 3.1 A ; (6)Drain Current (pulsed): 20 A ; (7)Total Dissipation at Tc = 25 : 96 W ; (8)Derating Factor: 0.4 W/ ; (9)Storage Temperature: -55 to 150 ; (10)Operating Junction Temperature: -55 to 150 .
Parameters: | Technical/Catalog Information | STD5NM60T4 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 96W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STD5NM60T4
STD5NM60T4
497 3163 1 ND
49731631ND
497-3163-1
|
STD5NM60T4 Data Sheet
