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STD60NF55L

Features: ` TYPICAL RDS(on) = 0.012` LOW THRESHOLD DRIVE` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· AUTOMOTIVE· MOTOR CONTROLSpecifications Symbol Parameter Value Unit VDS Collector-Source Voltage (VGS = 0 V) 55 V VDGR Drain-gate Voltage (RGS = 20 k) ...

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SeekIC No. : 004507522 Detail

STD60NF55L: Features: ` TYPICAL RDS(on) = 0.012` LOW THRESHOLD DRIVE` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· AUTOMOTIVE· MOTOR CONTROLSpecifications Symbol Parameter Value Unit ...

STD60NF55L Data Sheet

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Part Number:
STD60NF55L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.012
`  LOW THRESHOLD DRIVE
`  ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

·  AUTOMOTIVE
·  MOTOR CONTROL


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
55
V
VDGR Drain-gate Voltage (RGS = 20 k)

55
V
VGS Gate-Source Voltage
±15
V
ID Drain Current (continuous) at TC = 25
60
A
ID Drain Current (continuous) at TC = 100
42
A
IDM(`) Drain Current (pulsed)
240
A
Ptot Total Dissipation at TC = 25
110
W
  Derating Factor
0.73
W/
dv/dt(1) Peak Diode Recovery voltage slope
16
V/ns
EAS(2) Single Pulse Avalanche Energy
400
mJ
Tstg Storage Temperature
-55 to 175
Tj Operating Junction Temperature
(`) Pulse width limited by safe operating area
(1) ISD 40A, di/dt  350A/s, VDD  V(BR)DSS, Tj  TJMAX
(2) Starting Tj = 25, ID = 30A, VDD =20V


Description

This Power Mosfet STD60NF55L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility..




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