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STD6N10

MOSFET N-CH 100V 6A

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SeekIC No. : 00166248 Detail

STD6N10: MOSFET N-CH 100V 6A

STD6N10 Data Sheet

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Part Number:
STD6N10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

` TYPICAL RDS(on) = 0.35  
` AVALANCHE RUGGED TECHNOLOGY
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100oC
` LOW GATE CHARGE
` HIGH CURRENT CAPABILITY
` 175oC OPERATING TEMPERATURE
` APPLICATION ORIENTED CHARACTERIZATION
` THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1")
` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")


Application

 ·  HIGH CURRENT, HIGH SPEED SWITCHING
 ·  SOLENOID AND RELAY DRIVERS
 ·  REGULATORS
 ·  DC-DC & DC-AC CONVERTERS
 ·  MOTOR CONTROL, AUDIO AMPLIFIERS
 ·  AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
100
V
VDGR Drain-gate Voltage (RGS = 20 k)

100
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
6
A
ID Drain Current (continuous) at TC = 100
4
A
IDM(•) Drain Current (pulsed)
24
A
Ptot Total Dissipation at TC = 25
35
W
  Derating Factor
0.23
W/
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area


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