STD7NB20-1 Selling Leads, Price trend, STD7NB20-1 DataSheet download, circuit diagram from SeekIC.com

Features: ` TYPICAL RDS(on) = 0.3` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication· SWITH MODE POWER SUPPLIES (SMPS)· DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQ...

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SeekIC No. : 004507532 Detail

STD7NB20-1: Features: ` TYPICAL RDS(on) = 0.3` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` GATE CHARGE MINIMIZED` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELAppl...

STD7NB20-1 Data Sheet

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Part Number:: STD7NB20-1
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2025/12/23

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MOSFET N-Ch, 25V-0.0068ohms 60A

Product Details

Description

Features:

` TYPICAL R_DS(on) = 0.3
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
` ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL

Application

· SWITH MODE POWER SUPPLIES (SMPS)
· DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

Specifications

Symbol	Parameter	Value	Unit
V_DS	Collector-Source Voltage (V_GS = 0 V)	200	V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	200	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current (continuous) at T_C = 25	7	A
I_D	Drain Current (continuous) at T_C = 100	5	A
I_DM (`)	Drain Current (pulsed)	28	A
P_TOT	Total Dissipation at T_C= 25	55	W
	Derating Factor	0.44	W/
dv/dt(1)	Peak Diode Recovery voltage slope	5.5	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area.
(1) I_SD 7A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX

Description

Using the latest high voltage MESH OVERLAY™ process, STD7NB20-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest R_DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

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STD7NB20-1

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