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STD7NK40Z-1

Features: `TYPICAL RDS (on) = 0.85 `EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED`GATE CHARGE MINIMIZED`VERY LOW INTRINSIC CAPACITANCES`VERY GOOD MANUFACTURING REPEATIBILITYApplication·HIGH CURRENT, HIGH SPEED SWITCHING·IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC·LIGHTINGSpecificat...

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STD7NK40Z-1: Features: `TYPICAL RDS (on) = 0.85 `EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED`GATE CHARGE MINIMIZED`VERY LOW INTRINSIC CAPACITANCES`VERY GOOD MANUFACTURING REPEATIBILITYApplication·HIGH ...

STD7NK40Z-1 Data Sheet

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Part Number:
STD7NK40Z-1
Supply Ability:
5000

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Product Details

Description



Features:

`TYPICAL RDS (on) = 0.85
`EXTREMELY HIGH dv/dt CAPABILITY
`100% AVALANCHE TESTED
`GATE CHARGE MINIMIZED
`VERY LOW INTRINSIC CAPACITANCES
`VERY GOOD MANUFACTURING  REPEATIBILITY


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·IDEAL FOR OFF-LINE POWER SUPPLIES,  ADAPTORS AND PFC
·LIGHTING


Specifications

Symbol Parameter Value Unit

STP7NK40Z
STP7NK40ZFP		 STD7NK40Z
STD7NK40Z-1
VDS Drain-source Voltage (VGS = 0)
 400 V
VDGR Drain-gate Voltage (RGS = 20 )
 400 V
VGS Gate- source Voltage ±30 V
ID Drain Current (continuous) at TC = 25
 5.4 5.4(*) 5.4 A
ID Drain Current (continuous) at TC = 100 3.4 3.4(*) 3.4 A
IDM(`) Drain Current (pulsed) 21.6 21.6(*) 21.6 A
PTOT Total Dissipation at TC = 25
 70 25 70 W
  Derating Factor 0.56 0.2 0.56 W/
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K) 3000 V
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V
Tj
Tstg		 Operating Junction Temperature
Storage Temperature		 -55 to 150
-55 to 150



Description

The STD7NK40Z-1 SuperMESHTM series is obtained through an extreme optimization of ST's well established strip based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products.




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