Features: `TYPICAL RDS (on) = 0.85 `EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED`GATE CHARGE MINIMIZED`VERY LOW INTRINSIC CAPACITANCES`VERY GOOD MANUFACTURING REPEATIBILITYApplication·HIGH CURRENT, HIGH SPEED SWITCHING·IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC·LIGHTINGSpecificat...
STD7NK40Z: Features: `TYPICAL RDS (on) = 0.85 `EXTREMELY HIGH dv/dt CAPABILITY`100% AVALANCHE TESTED`GATE CHARGE MINIMIZED`VERY LOW INTRINSIC CAPACITANCES`VERY GOOD MANUFACTURING REPEATIBILITYApplication·HIGH ...
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| Symbol | Parameter | Value | Unit | ||
STP7NK40Z |
STP7NK40ZFP |
STD7NK40Z STD7NK40Z-1 | |||
| VDS | Drain-source Voltage (VGS = 0) |
400 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 ) |
400 | V | ||
| VGS | Gate- source Voltage | ±30 | V | ||
| ID | Drain Current (continuous) at TC = 25 |
5.4 | 5.4(*) | 5.4 | A |
| ID | Drain Current (continuous) at TC = 100 | 3.4 | 3.4(*) | 3.4 | A |
| IDM(`) | Drain Current (pulsed) | 21.6 | 21.6(*) | 21.6 | A |
| PTOT | Total Dissipation at TC = 25 |
70 | 25 | 70 | W |
| Derating Factor | 0.56 | 0.2 | 0.56 | W/ | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) | 3000 | V | ||
| dv/dt(1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
|||
The STD7NK40Z SuperMESHTM series is obtained through an extreme optimization of ST's well established strip based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products.