Features: ` TYPICAL RDS(on) = 0.35 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication · HIGH CURRENT, HIGH SPEED SWITCHING · SWITH MODE POWER SUPPLIES (SMPS) ·DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL...
STD7NS20-1: Features: ` TYPICAL RDS(on) = 0.35 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication · HIGH CURREN...
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| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
200 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
200 |
V |
| VGS | Gate-Source Voltage |
±20 |
V |
| ID | Drain Current (continuous) at TC = 25 |
7 |
A |
| ID | Drain Current (continuous) at TC = 100 |
4.4 |
A |
| IDM (`) | Drain Current (pulsed) |
28 |
A |
| PTOT | Total Dissipation at TC = 25 |
45 |
W |
| Derating Factor |
0.37 |
W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope |
5 |
V/ns |
| Tstg | Storage Temperature |
-65 to 150
|
|
| Tj | Max. Operating Junction Temperature |
150 |
Using the latest high voltage MESH OVERLAY™ process, STD7NS20-1 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.