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STD7NS20

Features: ` TYPICAL RDS(on) = 0.35 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication · HIGH CURRENT, HIGH SPEED SWITCHING · SWITH MODE POWER SUPPLIES (SMPS) ·DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL...

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SeekIC No. : 004507536 Detail

STD7NS20: Features: ` TYPICAL RDS(on) = 0.35 ` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTED` VERY LOW INTRINSIC CAPACITANCES` ADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplication · HIGH CURREN...

STD7NS20 Data Sheet

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Part Number:
STD7NS20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.35
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  VERY LOW INTRINSIC CAPACITANCES
`  ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

  · HIGH CURRENT, HIGH SPEED SWITCHING
  · SWITH MODE POWER SUPPLIES (SMPS)
  ·DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)

200
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
7
A
ID Drain Current (continuous) at TC = 100
4.4
A
IDM (`) Drain Current (pulsed)
28
A
PTOT Total Dissipation at TC = 25
45
W
  Derating Factor
0.37
W/
dv/dt(1) Peak Diode Recovery voltage slope
5
V/ns
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150
(`) Pulse width limited by safe operating area.
(1) ISD 7A, di/dt  300A/s, VDD V(BR)DSS, Tj  TJMAX


Description

Using the latest high voltage MESH OVERLAY™ process, STD7NS20 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.




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