Features: • Low collector saturation voltage VCE(sat) =0.4V(Max.)PinoutSpecifications Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 15 V Emitter-Base voltage VEBO 7 V Collector current(D...
STD882D: Features: • Low collector saturation voltage VCE(sat) =0.4V(Max.)PinoutSpecifications Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector...
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| Characteristic |
Symbol |
Ratings |
Unit |
| Collector-Base voltage |
VCBO |
40 |
V |
| Collector-Emitter voltage |
VCEO |
15 |
V |
| Emitter-Base voltage |
VEBO |
7 |
V |
| Collector current(DC) |
IC(DC) |
5 |
A |
| Collector current(Pulse) * |
IC(Pulse) * |
8 |
A |
| Collector dissipation |
PC |
15 |
W |
| Junction temperature |
Tj |
150 |
|
| Storage temperature range |
Tstg |
-55~150 |
STD882D features
• Suitable for low voltage large current drivers
• Excellent hFE Linearity
• Complementary pair with STB772D
• Switching Application
STD882D Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)