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STD8NS25

Features: ` TYPICAL RDS(on) = 0.38` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING·SWITH MODE POWER SUPPLIES (SMPS)· DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENTSpecifications Symbol Parameter Value Unit VDS ...

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SeekIC No. : 004507544 Detail

STD8NS25: Features: ` TYPICAL RDS(on) = 0.38` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SPEED SWITCHING·SWITH MODE POWER SUPPLIES (SMPS)· DC-DC CONVERTERS FOR TELEC...

STD8NS25 Data Sheet

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Part Number:
STD8NS25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 ` TYPICAL RDS(on) = 0.38
 ` EXTREMELY HIGH dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 ·SWITH MODE POWER SUPPLIES (SMPS)
 · DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
250
V
VDGR Drain-gate Voltage (RGS = 20 k)

250
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
8
A
ID Drain Current (continuous) at TC = 100
5
A
IDM(`) Drain Current (pulsed)
32
A
Ptot Total Dissipation at TC = 25
80
W
  Derating Factor
0.64
W/
dv/dt(1) Peak Diode Recovery voltage slope
5
V/ns
EAS(2) Single Pulse Avalanche Energy
209
mJ
Tstg Storage Temperature
-65 to 150
Tj Operating Junction Temperature
150
(`) Pulse width limited by safe operating area.
(1) ISD 8A, di/dt  300A/s, VDD    V(BR)DSS, Tj    TJMAX
(2) Starting Tj = 25, ID = 50A, VDD =20V


Description

Using the latest high voltage MESH OVERLAY™ process, STD8NS25 STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.




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