MOSFET RO 511-STD10NF10 TO-252 N-CH 100V 9A
STD9N10: MOSFET RO 511-STD10NF10 TO-252 N-CH 100V 9A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 9 A | ||
| Resistance Drain-Source RDS (on) : | 0.23 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | DPAK | Packaging : | Tube |
| Symbol | Parameter |
Value |
Unit |
| VDS | Collector-Source Voltage (VGS = 0 V) |
100 |
V |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
100 |
V |
| VGS | Gate-Source Voltage |
±20 |
V |
| ID | Drain Current (continuous) at TC = 25 |
9 |
A |
| ID | Drain Current (continuous) at TC = 100 |
6 |
A |
| IDM(•) | Drain Current (pulsed) |
36 |
A |
| Ptot | Total Dissipation at TC = 25 |
45 |
W |
| Derating Factor |
0.3 |
W/ | |
| Tstg | Storage Temperature |
-60 to 175 |
|
| Tj | Max. Operating Junction Temperature |
175 |