Features: TYPICAL RDS(on) = 0.22 WAVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTEDREPETITIVE AVALANCHE DATA AT 100oCHIGH CURRENT CAPABILITY175oC OPERATING TEMPERATUREHIGH dV/dt RUGGEDNESSAPPLICATION ORIENTED CHARACTERIZATIONSURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T...
STD9N10L: Features: TYPICAL RDS(on) = 0.22 WAVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTEDREPETITIVE AVALANCHE DATA AT 100oCHIGH CURRENT CAPABILITY175oC OPERATING TEMPERATUREHIGH dV/dt RUGGEDNESSAPPLICATION...
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|
Symbol |
Parameter |
Value |
Unit |
|
VCES |
Drain-source Voltage (VGS = 0) |
100 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
100 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
9 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
6.4 |
A |
|
IDM () |
Drain Current (pulsed) |
36 |
A |
|
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
45 |
W |
|
|
Derating Factor |
0.3 |
W/°C |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
7 |
V/ns |
|
Tstg |
Storage Temperature |
- 65 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C |