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STD9NM50N-1: MOSFET N-Channel 500V Pwr Mosfet

STD9NM50N-1 Data Sheet

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Part Number:: STD9NM50N-1
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	7.5 A
Resistance Drain-Source RDS (on) :	0.56 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.5 A
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.56 Ohms

Parameters:

Technical/Catalog Information	STD9NM50N-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	560 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 50V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD9NM50N 1 STD9NM50N1

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STD9NM50N-1

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