STD9NM60-1

Features: ` TYPICAL RDS(on) = 0.55 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` IMPROVED ESD CAPABILITY` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDSApplicationThe MDmesh™ family is very suitable for increase the power dens...

product image

STD9NM60-1 Picture
SeekIC No. : 004507551 Detail

STD9NM60-1: Features: ` TYPICAL RDS(on) = 0.55 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` IMPROVED ESD CAPABILITY` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH ...

floor Price/Ceiling Price

Part Number:
STD9NM60-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` TYPICAL RDS(on) = 0.55
` HIGH dv/dt AND AVALANCHE CAPABILITIES
` IMPROVED ESD CAPABILITY
` LOW INPUT CAPACITANCE AND GATE CHARGE
` LOW GATE INPUT RESISTANCE
` TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS



Application

The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 k)
600
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25
8.3
A
ID
Drain Current (continuos) at TC = 100
5.2
A
IDM (`)
Drain Current (pulsed)
33.2
A
Ptot
Total Dissipation at TC = 25
100
W
Derating Factor
0.8
W/
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-65 to 150

(`) Pulse width limited by safe operating area.

(1) ISD 7A, di/dt 400 µA, VDD V(BR)DSS, Tj TJMAX.


Description

The STD9NM60-1 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cables, Wires - Management
Computers, Office - Components, Accessories
Circuit Protection
Sensors, Transducers
Semiconductor Modules
Integrated Circuits (ICs)
View more