Features: ` TYPICAL RDS(on) = 0.55 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` IMPROVED ESD CAPABILITY` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDSApplicationThe MDmesh™ family is very suitable for increase the power dens...
STD9NM60: Features: ` TYPICAL RDS(on) = 0.55 ` HIGH dv/dt AND AVALANCHE CAPABILITIES` IMPROVED ESD CAPABILITY` LOW INPUT CAPACITANCE AND GATE CHARGE` LOW GATE INPUT RESISTANCE` TIGHT PROCESS CONTROL AND HIGH ...
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The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 k) |
600 |
V |
|
VGS |
Gate- source Voltage |
±30 |
V |
|
ID |
Drain Current (continuos) at TC = 25 |
8.3 |
A |
|
ID |
Drain Current (continuos) at TC = 100 |
5.2 |
A |
|
IDM (`) |
Drain Current (pulsed) |
33.2 |
A |
|
Ptot |
Total Dissipation at TC = 25 |
100 |
W |
| Derating Factor |
0.8 |
W/ | |
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
15 |
V/ns |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-65 to 150 |
The STD9NM60 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products.