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STD9NM60N-1

Features: ·100% AVALANCHE TESTED· LOW INPUT CAPACITANCE AND GATE CHARGE·LOW GATE INPUT RESISTANCEApplication·HIGHER EFFICIENCIESSpecifications Symbol Parameter Value Unit TO-220/DPAK/IPAK TO-220FP VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector...

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SeekIC No. : 004507552 Detail

STD9NM60N-1: Features: ·100% AVALANCHE TESTED· LOW INPUT CAPACITANCE AND GATE CHARGE·LOW GATE INPUT RESISTANCEApplication·HIGHER EFFICIENCIESSpecifications Symbol Parameter Value Unit TO-220/D...

STD9NM60N-1 Data Sheet

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Part Number:
STD9NM60N-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/21

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Product Details

Description



Features:

·100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
·LOW GATE INPUT RESISTANCE


Application

·HIGHER EFFICIENCIES


Specifications

Symbol Parameter Value   Unit
    TO-220/DPAK/IPAK TO-220FP  
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 600 V
VGE Gate-Emitter Voltage ±25 V
IC Collector Current (continuous) at TC = 25°C (#) 20 9 A
IC Collector Current (continuous) at TC = 100°C (#) 10 6 A
ICM (`) Collector Current (pulsed) 40 A
IF Diode RMS Forward Current at TC = 25°C 10 A
PTOT Total Dissipation at TC = 25°C 60 25 W
  Derating Factor 0.48 0.20 W/°C
VISO Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) - 2500 V
Tstg Storage Temperature 55 to 150 °C
Tj Operating Junction Temperature




Description

The STP9NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.




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