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STDID5B

Features: TYPICAL RDS(on) = 0.1 WAPPLICATION ORIENTED CHARACTERIZATIONADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationDC MOTOR CONTROLDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value Unit VCES Drain-source Voltage (VGS = 0) 55 V VDGR Dr...

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STDID5B: Features: TYPICAL RDS(on) = 0.1 WAPPLICATION ORIENTED CHARACTERIZATIONADD SUFFIX T4 FOR ORDERING IN TAPE & REELApplicationDC MOTOR CONTROLDC-DC & DC-AC CONVERTERSSpecifications Symb...

STDID5B Data Sheet

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Part Number:
STDID5B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.1 W
 APPLICATION ORIENTED CHARACTERIZATION
 ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL


Application

 DC MOTOR CONTROL
 DC-DC & DC-AC CONVERTERS


Specifications

Symbol
 Parameter
Value
Unit
VCES
 Drain-source Voltage (VGS = 0)
55
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

55

V

VGE
 Gate-Emitter Voltage
± 20
V

ID(*)

Drain Current (continuous) at TC = 25°C

12

A

ID
Drain Current (continuous) at TC = 100°C
8

A
IDM ()
Drain Current (pulsed)
48
A
PTOT
Total Dissipation at TC = 25°C (Steady State)
35
W
 Derating Factor
0.23
W/°C
EAS(1)
 Single Pulse Avalanche Energy 
25
mJ

Tstg

 Storage Temperature

- 65 to 175
°C

Tj

Max. Operating Junction Temperature

175

°C




Description

This STDID5B Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeÔ" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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