STE250NS10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Source
Continuous Drain Current : 220 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms
Package / Case : ISOTOP


Features:

 TYPICAL R_DS(on) = 0.0045W
 STANDARD THRESHOLD DRIVE
 100% AVALANCHE TESTED


Application

 SMPS & UPS
 MOTOR CONTROL
 WELDING EQUIPMENT
 OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS


Specifications

Symbol	Parameter	Value		Unit
VCES	Drain-source Voltage (VGS = 0)	100		V
VDGR	Drain- gate Voltage (RGS = 20 kW)	100		V
VGE	Gate-Emitter Voltage	± 20		V
ID	Drain Current (continuous) at TC = 25°C (Steady State)	220		A
ID	Drain Current (continuous) at TC = 100°C	156		A
IDM (*)	Drain Current (pulsed)	880		A
PTOT	Total Dissipation at TC = 25°C (Steady State)	500		W
	Derating Factor	3.5		W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	3		V/ns
VISO	Insulation Winthstand Voltage (AC-RMS)	2500		V
Tj	Operating Junction Temperature	- 55 to 150		°C
Tstg	Storage Temperature	150		°C