STE70NM60

Transistor Polarity : N-Channel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Configuration : Single Dual Source
Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.055 Ohms
Package / Case : ISOTOP


Features:

 TYPICAL R_DS(on) = 0.050W
 HIGH dv/dt AND AVALANCHE CAPABILITIES
 IMPROVED ESD CAPABILITY
 LOW INPUT CAPACITANCE AND GATE CHARGE
 LOW GATE INPUT RESISTANCE
 TIGHT PROCESS CONTROL
 INDUSTRY'S LOWEST ON-RESISTANCE


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
VCES	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain- gate Voltage (RGS = 20 kW)	600		V
VGE	Gate-Emitter Voltage	± 30		V
ID	Drain Current (continuous) at TC = 25°C (Steady State)	70		A
ID	Drain Current (continuous) at TC = 100°C	44		A
IDM (*)	Drain Current (pulsed)	280		A
PTOT	Total Dissipation at TC = 25°C (Steady State)	600		W
Ptot	Derating Factor	6		W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5k)	4.5		KV
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
Tj	Operating Junction Temperature	- 65 to 150		°C
Tstg	Storage Temperature	150		°C

Description

The STE70NM60 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.