Position: Home  > All Categories> Integrated Circuits (ICs) > STF19NF20

STF19NF20

MOSFET N Ch 55V 3.2 120A Pwr MOSFET

product image

STF19NF20 Picture
See larger image
SeekIC No. : 00155767 Detail

STF19NF20: MOSFET N Ch 55V 3.2 120A Pwr MOSFET

STF19NF20 Data Sheet

floor Price/Ceiling Price

US $ .46~.57 / Piece | Get Latest Price
Part Number:
STF19NF20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~650
  • 650~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.57
  • $.5
  • $.47
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.16 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220FP
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.16 Ohms


Features:

Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances


Application

Switching application


Specifications

Symbol Parameter
Value
Unit
TO-220 / D²PAK
TO-220FP
VDS Drain-source voltage (VGS = 0)
200
V
VGS Gate-source voltage
± 20
V
ID Drain current (continuous) at TC = 25°C
15
15(1)
A
ID Drain current (continuous) at TC=100°C
9.45
9.45(1)
A
IDM(2) Drain current (pulsed)
60
60 (1)
A
PTOT Total dissipation at TC = 25°C
90
25
W
  Derating factor
0.72
0.2
W/°C
VISO Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
dv/dt(3) Peak diode recovery voltage slope
15
V/ns
TJ
Tstg		 Operating junction temperature
Storage temperature
-55 to 150
°C



Description

This STF19NF20 Power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.




Parameters:

Technical/Catalog InformationSTF19NF20
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs160 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF19NF20
STF19NF20
497 7472 5 ND
49774725ND
497-7472-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cable Assemblies
CS1W-CN114
XW2Z-500T
Tools
TCP202
G084SN05 V.3
Cables, Wires
821-0814-a
415-0100-150
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
LED Products
LM24P20
KCG057QV1DB-G770
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more