STF20N20

MOSFET N-Ch 200 Volt 18 Amp

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SeekIC No. : 00161417 Detail

STF20N20: MOSFET N-Ch 200 Volt 18 Amp

floor Price/Ceiling Price

Part Number:
STF20N20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.125 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220FP
Resistance Drain-Source RDS (on) : 0.125 Ohms


Features:

` TYPICAL RDS(on) = 0.10
` EXCEPTIONAL dv/dt CAPABILITY
` LOW GATE CHARGE
` 100% AVALANCHE TESTED



Application

· HIGH CURRENT SWITCHING APPLICATIONS
· HIGH EFFICIENCY DC-DC CONVERTERS
· PRIMARY SIDE SWITCH



Specifications

Symbol Parameter
Value
Unit
TO-220/DPAK
TO-220FP
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)

200

V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
18
A
ID Drain Current (continuous) at TC = 100
11
A
IDM(`) Drain Current (pulsed)
72
A
PTOT Total Dissipation at TC = 25
90
25
W
  Derating Factor
0.72
0.2
W/
dv/dt(1) Peak Diode Recovery voltage slope
15
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
(`) Pulse width limited by safe operating area
(1) ISD 18A, di/dt 400A/s, VDD V(BR)DSS



Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.




Parameters:

Technical/Catalog InformationSTF20N20
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs125 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 940pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF20N20
STF20N20
497 4339 5 ND
49743395ND
497-4339-5



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