MOSFET N-Ch 200 Volt 18 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 18 A | ||
| Resistance Drain-Source RDS (on) : | 0.125 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220FP | Packaging : | Tube |
| Symbol | Parameter |
Value |
Unit | |
|
TO-220/DPAK |
TO-220FP | |||
| VDS | Collector-Source Voltage (VGS = 0 V) |
200 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
200 |
V | |
| VGS | Gate-Source Voltage |
±20 |
V | |
| ID | Drain Current (continuous) at TC = 25 |
18 |
A | |
| ID | Drain Current (continuous) at TC = 100 |
11 |
A | |
| IDM(`) | Drain Current (pulsed) |
72 |
A | |
| PTOT | Total Dissipation at TC = 25 |
90 |
25 |
W |
| Derating Factor |
0.72 |
0.2 |
W/ | |
| dv/dt(1) | Peak Diode Recovery voltage slope |
15 |
V/ns | |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
||
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
| Technical/Catalog Information | STF20N20 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 18A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 10A, 10V |
| Input Capacitance (Ciss) @ Vds | 940pF @ 25V |
| Power - Max | 25W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 39nC @ 10V |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STF20N20 STF20N20 497 4339 5 ND 49743395ND 497-4339-5 |