STF2HNK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 4.8 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 4.4
` EXTREMELY HIGH dv/dt CAPABILITY
` ESD IMPROVED CAPABILITY
` 100% AVALANCHE TESTED
` NEW HIGH VOLTAGE BENCHMARK
` GATE CHARGE MINIMIZED


Application

· AC ADAPTORS AND BATTERY CHARGERS
· SWITH MODE POWER SUPPLIES (SMPS)


Specifications

Symbol	Parameter	Value			Unit
		IPAK	TO-220FP	TO-92
VDS	Collector-Source Voltage (VGS = 0 V)	600			V
VDGR	Drain-gate Voltage (RGS = 20 k)	600			V
VGS	Gate-Source Voltage	±30			V
ID	Drain Current (continuous) at TC = 25	2.0	2.0(*)	0.5	A
ID	Drain Current (continuous) at TC = 100	1.26	1.26(*)	0.32	A
IDM(`)	Drain Current (pulsed)	8	8(*)	2	A
PTOT	Total Dissipation at TC = 25	45	20	3	W
	Derating Factor	0.36	0.16	0.025	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	2000			V
dv/dt(1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	1	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(•) Pulse width limited by safe operating area.
(1) I_SD 2A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX
(*) Current Limited by package


Description

The STF2HNK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.