STF2NK60Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 8 Ohms


Features:

`  TYPICAL R<sub>DS(on)</sub> = 7.2
`  EXTREMELY HIGH dv/dt CAPABILITY
`  ESD IMPROVED CAPABILITY
`  100% AVALANCHE TESTED
`  NEW HIGH VOLTAGE BENCHMARK
`  GATE CHARGE MINIMIZED


Application

·  LOW POWER BATTERY CHARGERS
·  SWITH MODE LOW POWER SUPPLIES(SMPS)
·  LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS)


Specifications

Symbol	Parameter	Value			Unit
		TO-220 / IPAK	TO-92	TO-220FP
VDS	Collector-Source Voltage (VGS = 0 V)	800			V
VDGR	Drain-gate Voltage (RGS = 20 k)	800			V
VGS	Gate-Source Voltage	±30			V
ID	Drain Current (continuous) at TC = 25	1.4	0.4	1.4	A
ID	Drain Current (continuous) at TC = 100	0.77	0.25	0.77	A
IDM(`)	Drain Current (pulsed)	5.6	1.6	5.6	A
PTOT	Total Dissipation at TC = 25	45	3	20	W
	Derating Factor	0.36	0.025	0.16	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	1500			KV
dv/dt(1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	-	-	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 1.4A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STF2NK60Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.