STF8NK100Z

MOSFET N-Ch 1000 V 1.6 Ohm Zener SuperMESH 6.5A

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SeekIC No. : 00151389 Detail

STF8NK100Z: MOSFET N-Ch 1000 V 1.6 Ohm Zener SuperMESH 6.5A

floor Price/Ceiling Price

US $ 1.57~2.35 / Piece | Get Latest Price
Part Number:
STF8NK100Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.35
  • $1.98
  • $1.68
  • $1.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2025/12/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 1.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 6.5 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 1.6 Ohms


Features:

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE RATED
IMPROVED ESD CAPABILITY
VERY LOW INTRINSIC CAPACITANCE



Application

HIGH CURRENT,SWITCHING APPLICATION
IDEAL FOR OFF-LINE POWER SUPPLIES



Specifications

Symbol Parameter Value Unit
TO-220 TO-220FP
VDS

VDGR

VGS
Drain-source Voltage (VGS=0)

Drain-gate Voltage

Gate-Source Voltage
1000

1000

± 30
V

V

V
ID Note 1

ID

IDM Note 2

PTOT


Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

Drain Current (pulsed)

Total Dissipation at TC = 25°C

Derating Factor
6.5

4.3

16

160

1.28
6.5

4.3

16

40

0.32
A

A

A

W

W/°C
VESD(G-S)

dv/dt Note 3
Gate source ESD (HBM-C=100pF, R=1.5K)

Peak Diode Recovery voltage slope
4000

4.5
V

V/ns
VISO Insulation Withstand Voltage (DC) -- 2500 V
Tj

Tstg
Operating Junction Temperature

Storage Temperature
-55 to 150 °C



Description

The STF8NK100Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTF8NK100Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C6.5A
Rds On (Max) @ Id, Vgs1.85 Ohm @ 3.15A, 10V
Input Capacitance (Ciss) @ Vds 2180pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs102nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STF8NK100Z
STF8NK100Z
497 5007 5 ND
49750075ND
497-5007-5



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