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STFV4N150

MOSFET IGBT

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SeekIC No. : 00164051 Detail

STFV4N150: MOSFET IGBT

STFV4N150 Data Sheet

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Part Number:
STFV4N150
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FH Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 7 Ohms
Drain-Source Breakdown Voltage : 1500 V
Package / Case : TO-220FH


Parameters:

Technical/Catalog InformationSTFV4N150
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1500V (1.5kV)
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs7 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseTO-220-3 Full Pack High Voltage
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STFV4N150
STFV4N150
497 5093 5 ND
49750935ND
497-5093-5



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